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| inchange semiconductor isc product specification isc silicon pnp power transistor bdx92/94/96 description collector current -i c = - 10a collector-emitter breakdown voltage- : v (br)ceo = -60v(min)- bdx92 -80v(min)- bdx94 -100v(min)- BDX96 complement to type bdx91/93/95 applications designed for use in general purpose power amplifier and switching applications absolute maximum ratings(t a =25 ) symbol parameter value unit bdx92 -60 bdx94 -80 v cbo collector-base voltage BDX96 -100 v bdx92 -60 bdx94 -80 v ceo collector-emitter voltage BDX96 -100 v v ebo emitter-base voltage -5 v i c collector current-continuous -10 a i cm collector current-peak -15 a p c collector power dissipation @ t c =25 90 w t j junction temperature 200 t stg storage temperature range -65~200 thermal characteristics symbol parameter max unit r th j-c thermal resistance, junction to case 1.94 /w isc website www.iscsemi.cn
inchange semiconductor isc product specification isc silicon pnp power transistor bdx92/94/96 electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min typ. max unit bdx92 -45 bdx94 -60 v (br)ceo collector-emitter breakdown voltage BDX96 i c = -30ma ;i b =0 b -80 v v ce(sat)-1 collector-emitter saturation voltage i c = -3a; i b = -0.3a b -0.8 v v ce(sat)-2 collector-emitter saturation voltage i c = -5a; i b = -1a b -1.0 v v be(sat)-1 base-emitter saturation voltage i c = -3a; i b = -0.3a b -1.5 v v be(sat)-2 base-emitter saturation voltage i c = -5a; i b = -1a b -2.0 v v be( on ) base-emitter on voltage i c = -3a; v ce = -2v -1.4 v bdx92 v cb = -60v; i e = 0 v cb = -30v; i e = 0; t c = 150 -0.1 -2.0 bdx94 v cb = -80v; i e = 0 v cb = -40v; i e = 0; t c = 150 -0.1 -2.0 i cbo collector cutoff current BDX96 v cb = -100v; i e = 0 v cb = -50v; i e = 0; t c = 150 -0.1 -2.0 ma bdx92 v ce = -60v;i b = 0 bdx94 v ce = -80v;i b = 0 i ceo collector cutoff current BDX96 v ce = -100v;i b = 0 -0.2 ma i ebo emitter cutoff current v eb = -5v; i c = 0 -0.1 ma h fe-1 dc current gain i c = -3a; v ce = -2v 20 h fe-2 dc current gain i c = -5a; v ce = -2v 10 f t current-gain?bandwidth product i c = -1a; v ce = -10v 4 mhz switching times t on turn-on time 1.0 s t off turn-off time i c = -3a; i b1 = -i b2 = -0.3a 2.0 s isc website www.iscsemi.cn 2 |
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